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US 2017/0288122 A1Published application
Baw resonator having thin seed layer
AssigneeAvago Technologies General IP (Singapore) Pte. Ltd.
InventorsQiang Zou, Chris Feng, Phil Nikkel, John Choy
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Abstract
A bulk acoustic wave (BAW) resonator comprises: a seed layer disposed over a substrate; a first electrode disposed over the seed layer; and a second electrode disposed over a piezoelectric layer. The seed layer has a thickness in the range of approximately 30 Å to approximately 150 Å.
Claims30
A bulk acoustic wave (BAW) resonator comprising:
- a seed layer disposed over a substrate, the seed layer having a thickness in the range of approximately 30 Å to approximately 150 Å;
- a first electrode disposed on the seed layer;
- and
- a second electrode disposed over a piezoelectric layer.
1 more element
A bulk acoustic wave (BAW) resonator comprising:
- a seed layer disposed over a substrate, the seed layer having a thickness in the range of approximately 30 Å to approximately 60 Å;
- a first electrode disposed on the seed layer;
- and
- a second electrode disposed over a piezoelectric layer.
1 more element
A bulk acoustic wave (BAW) resonator comprising:
- a seed layer disposed over a substrate, the seed layer having a thickness in the range of approximately 30 Å to approximately 60 Å;
- a composite first electrode disposed over a substrate, the composite first electrode comprising:
- a base electrode layer disposed on the seed layer;
- a temperature compensation layer disposed on the base electrode layer;
- a seed interlayer disposed on the temperature compensation layer, the seed interlayer having a thickness between about 30 Å and about 60 Å;
- and
- a conductive interposer layer disposed on at least the seed interlayer, at least a portion of the conductive interposer layer contacting the base electrode layer;
- a piezoelectric layer disposed on the composite first electrode, the piezoelectric layer comprising a piezoelectric material doped with scandium (Sc) for improving piezoelectric properties of the piezoelectric layer;
- and
- a second electrode disposed on the piezoelectric layer,
- wherein the piezoelectric layer has a negative temperature coefficient and the temperature compensation layer has a positive temperature coefficient that at least partially offsets the negative temperature coefficient of the piezoelectric layer.
8 more elements
A bulk acoustic wave (BAW) resonator comprising:
- a seed layer disposed over a substrate, the seed layer having a thickness in the range of approximately 30 Å to approximately 150 Å;
- a composite first electrode disposed over a substrate, the composite first electrode comprising:
- a base electrode layer disposed on the seed layer;
- a temperature compensation layer disposed over the base electrode layer;
- a seed interlayer disposed over the temperature compensation layer, the seed interlayer having a thickness between about 30 Å and about 150 Å;
- and
- a conductive interposer layer disposed on at least the seed interlayer, at least a portion of the conductive interposer layer contacting the base electrode layer;
- a piezoelectric layer disposed on the composite first electrode, the piezoelectric layer comprising a piezoelectric material doped with scandium (Sc) for improving piezoelectric properties of the piezoelectric layer;
- and
- a second electrode disposed over the piezoelectric layer, wherein the piezoelectric layer has a negative temperature coefficient and the temperature compensation layer has a positive temperature coefficient that at least partially offsets the negative temperature coefficient of the piezoelectric layer.
7 more elements
Dependencies are inferred from the claim text.