Acoustic resonator including composite polarity piezoelectric layer having opposite polarities
AssigneeAvago Technologies General IP (Singapore) Pte. Ltd.
InventorsDariusz Burak, Kevin J. Grannen
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AssigneeAvago Technologies General IP (Singapore) Pte. Ltd.
InventorsDariusz Burak, Kevin J. Grannen
Estimating the term…
A bulk acoustic wave (BAW) resonator device includes a bottom electrode disposed over a substrate and an acoustic reflector, a seed layer formed of a dielectric material disposed over the bottom electrode, a split piezoelectric layer disposed on the seed layer, and a top electrode disposed over the split piezoelectric layer. The split piezoelectric layer includes a first portion having a positive polarity due to the seed layer, a second portion having a negative polarity that is substantially opposite to the positive polarity of the first portion, and a metal interposer between the first portion and the second portion. The first portion of the piezoelectric layer has a first thickness and the second portion of the piezoelectric layer has a second thickness that is not equal to the first thickness, thereby lowering a coupling coefficient kt2 of the BAW resonator device.
A bulk acoustic wave (BAW) resonator device, comprising:
A bulk acoustic wave (BAW) resonator device, comprising:
Dependencies are inferred from the claim text.