Optoelectronic semiconductor component
AssigneeOSRAM Opto Semiconductors GmbH
InventorGuido WEISS
Life of this patent
Estimating the term…
Abstract
Disclosed is an optoelectronic semiconductor component (1) comprising a semiconductor member (2) that has a succession of semiconductor layers including an active region (20) for generating radiation, a first semiconductor layer (21), and a second semiconductor layer (22). The active region is located between the first semiconductor layer and the second semiconductor layer; the semiconductor member has a plurality of cavities (25) which extend through the second semiconductor layer and the active region; and from a bird's eye view onto the semiconductor member, the cavities are elongate and have a longitudinal axis (250).
Claims13
Optoelectronic semiconductor component with a semiconductor body, which compromises a semiconductor layer sequence with an active region provided for the generation of radiation, a first semiconductor layer and a second semiconductor layer, wherein
- the active region is arranged between the first semiconductor layer and the second semiconductor layer;
- the semiconductor body comprises a plurality of recesses extending through the second semiconductor layer and the active region;
- and
- in a plan view of the semiconductor body, the recesses are formed elongated with a longitudinal extension axis.
Optoelectronic semiconductor component with a semiconductor body, which compromises a semiconductor layer sequence with an active region provided for the generation of radiation, a first semiconductor layer and a second semiconductor layer, wherein
- the active region is arranged between the first semiconductor layer and the second semiconductor layer;
- the semiconductor body comprises a plurality of recesses extending through the second semiconductor layer and the active region;
- in a plan view of the semiconductor body, the recesses are formed elongated with a longitudinal extension axis;
- the semiconductor component comprises a first connection layer, which is guided through the recesses and which is electrically conductively connected to the first semiconductor layer;
- the semiconductor component comprises a second connection layer, via which the second semiconductor layer is connected to a second contact;
- the second contact is arranged laterally beside the semiconductor body and extends along a side face of the semiconductor body located closest to the second contact, so that in a plane of the second connection layer a preferred lateral current direction runs parallel to the longitudinal extension axis in the second connection layer.
Optoelectronic semiconductor component with a semiconductor body, which compromises a semiconductor layer sequence with an active region provided for the generation of radiation, a first semiconductor layer and a second semiconductor layer, wherein
- the active region is arranged between the first semiconductor layer and the second semiconductor layer;
- the semiconductor body comprises a plurality of recesses extending through the second semiconductor layer and the active region;
- the recesses are arranged at least approximately on intersection points of first straight lines, which extend parallel to one another along a first direction, and second straight lines, which extend parallel to one another along a second direction;
- the first straight lines run at a first distance to one another other;
- the second straight lines run at a second distance to one another;
- the first straight lines run at a larger angle to the longitudinal extension axis than the second straight lines;
- and
- the first distance is larger than the second distance.
Dependencies are inferred from the claim text.