Semiconductor structure

A semiconductor structure comprising:

• a first conductivity type semiconductor layer;
• a light emitting layer comprises a multiple quantum well (MQW) structure, wherein the MQW structure comprises a plurality of well layers and a plurality of barrier layers stacked alternately;
• a second conductivity type semiconductor layer;
• a GaN based carrier blocking layer containing aluminum, disposed between the light emitting layer and the second conductivity type semiconductor layer;
• and
• a GaN based stress control layer containing indium and aluminum, disposed between the light emitting layer and the GaN based carrier blocking layer, wherein a level of aluminum in the GaN based stress control layer is smaller than or equal to a level of aluminum in the GaN based carrier blocking layer.

A semiconductor structure comprising:

• a first conductivity type semiconductor layer;
• a light emitting layer comprises a multiple quantum well (MQW) structure, wherein the MQW structure comprises a plurality of well layers and a plurality of barrier layers stacked alternately;
• a super lattice layer disposed between the light emitting layer and the first conductivity type semiconductor layer;
• a second conductivity type semiconductor layer;
• a GaN based carrier blocking layer containing aluminum, disposed between the light emitting layer and the second conductivity type semiconductor layer;
• and
• a GaN based stress control layer containing indium and aluminum, disposed between the light emitting layer and the GaN based carrier blocking layer,
• wherein a level of aluminum in the GaN based stress control layer is smaller than or equal to a level of aluminum in the GaN based carrier blocking layer,
• wherein a level of indium in the GaN based stress control layer is equal to or smaller than a level of indium in well layers of the MQW structure.