Active layer structure, semiconductor light emitting element, and display apparatus

An active layer structure, comprising:

• a first conductive layer having a current constriction structure, a current injection region being constricted in the current constriction structure;
• a second conductive layer;
• and
• an active layer provided between the first conductive layer and the second conductive layer, wherein
• the active layer includes a plurality of quantum well layers, a first light emission wavelength being in a wavelength range of an intensity peak of an entire light emission spectrum, the first light emission wavelength corresponding to a light emission recombination level energy gap of a first quantum well layer of the plurality of quantum well layers, the first quantum well layer being provided at a position closest to the current constriction structure.

A display apparatus, comprising:

• a semiconductor light emitting element;
• and
• an image generation unit that is capable of two-dimensionally scanning light emitted from the semiconductor light emitting element and controlling a brightness of the projected light on the basis of image data, wherein
• the semiconductor light emitting element includes
• a first conductive layer having a current constriction structure, a current injection region being constricted in the current constriction structure,
• a second conductive layer, and
• an active layer provided between the first conductive layer and the second conductive layer, the active layer including a plurality of quantum well layers, a first light emission wavelength being in a wavelength range of an intensity peak of an entire light emission spectrum, the first light emission wavelength corresponding to a light emission recombination level energy gap of a first quantum well layer of the plurality of quantum well layers, the first quantum well layer being provided at a position closest to the current constriction structure.