Light emitting diodes with n-polarity and associated methods of manufacturing
AssigneeMicron Technology, Inc.
InventorsZaiyuan Ren, Thomas Gehrke
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Abstract
Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.
Claims21
A light emitting diode, comprising:
- a substrate having a substrate material;
- a first semiconductor material directly on a surface of the substrate;
- an active region on the first semiconductor material, the active region having a nitrogen-polarity crystal structure;
- a second semiconductor material on the active region;
- and
- wherein the light emitting diode does not include a nitrodizing product of the substrate material at an interface between the surface of the substrate and the first semiconductor material.
A light emitting diode device, comprising:
- a substrate material having a first major surface and an opposite second major surface;
- an active region carried by the substrate material, wherein a distance between the first major surface of the substrate material and the active region is less than a distance between the second major surface of the substrate material and the active region;
- nitrogen atoms adsorbed onto the first major surface of the substrate material, wherein an interaction energy between the nitrogen atoms and the substrate material is less than 10.0 kcal/mol;
- and
- a nitrogen-polar material between the substrate material and the active region.
A light emitting diode device, comprising:
- a substrate material having a first major surface and an opposite second major surface;
- an active region carried by the substrate material, wherein a distance between the first major surface of the substrate material and the active region is less than a distance between the second major surface of the substrate material and the active region;
- nitrogen atoms diffused into the substrate material via the first major surface of the substrate material, wherein an interaction energy between the nitrogen atoms and the substrate material is less than 10.0 kcal/mol;
- and
- a nitrogen-polar material between the substrate material and the active region.
Dependencies are inferred from the claim text.