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US 2017/0288076 A1Published application
Silicon-based quantum dot device
AssigneeHitachi, Ltd.
InventorsAleksey ANDREEV, David WILLIAMS, Ryuta TSUCHIYA, Yuji SUWA
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Abstract
A silicon-based quantum dot device (1) is disclosed. The device comprises a substrate (8) and a layer (7) of silicon or silicon-germanium supported on the substrate which is configured to provide at least one quantum dot (51, 52: FIG. 5). The layer of silicon or silicon-germanium has a thickness of no more than ten monolayers. The layer of silicon or silicon-germanium may have a thickness of no more than eight or five monolayers.
Claims15
A silicon-based quantum dot device comprising:
- a substrate;
- and
- a layer of silicon or silicon-germanium supported on the substrate configured to provide at least one quantum dot;
- characterised in that the layer of silicon or silicon-germanium has a thickness of no more than ten monolayers.
1 more element
Dependencies are inferred from the claim text.