Photovoltaic device and methods of forming the same

A method of manufacturing a photovoltaic device comprising the steps of:

• depositing a semiconductor absorber layer on a substrate, wherein the semiconductor absorber layer is formed from CdTe;
• depositing a p-type back contact buffer layer on the semiconductor absorber layer, wherein the depositing a p-type back contact buffer layer step is a sputtering step whereby the MnTe back contact buffer layer is deposited on the semiconductor absorber layer by sputtering MnTe with a MnTe target onto the semiconductor absorber layer;
• and
• depositing a back contact layer on the p-type back contact buffer layer.

A method of manufacturing a photovoltaic device comprising the steps of:

• depositing a semiconductor absorber layer on a substrate, wherein the semiconductor absorber layer is formed from CdTe;
• depositing a p-type back contact buffer layer on the semiconductor absorber layer, wherein the depositing a p-type back contact buffer layer step is a chemical reaction step involving:
• a. depositing MnI2 solution onto the semiconductor absorber layer by one of application of liquid MnI2 thereon and evaporating MnI2 onto thereon;
• and
• b. annealing the MnI2-coated semiconductor absorber layer to form the p-type back contact;
• and
• depositing a back contact layer on the p-type back contact buffer layer.