Semiconductor device and method of producing semiconductor device

2:

• The semiconductor device according to claim 1, further comprising:
• a pixel electrode formed from a transparent electrode film in an upper layer relative to the second insulating film;
• and
• a capacitive trace formed in a lower layer relative to the first insulating film to overlap the pixel electrode, wherein
• the oxide semiconductor film is formed such that the capacitive trace is formed from the low resistance portion.

3:

• The semiconductor device according to claim 1, further comprising:
• a pixel electrode formed from a transparent electrode film in an upper layer relative to the second insulating film;
• and
• a transistor formed in a lower layer relative to the pixel electrode and connected to the pixel electrode to control application of an electrical potential to the pixel electrode, wherein
• the oxide semiconductor film is formed such that a channel included in the transistor is formed from the other portion.

5:

• A method of producing a semiconductor device, the method comprising:
• an oxide semiconductor film forming step for forming an oxide semiconductor film from oxide semiconductor material to separate a portion of the oxide semiconductor film from another portion of the oxide semiconductor film;
• a first insulating film forming step for forming a first insulating film in an upper layer relative to the oxide semiconductor film;
• a hole forming step for forming a hole in the first insulating film at a position overlapping the portion of the oxide semiconductor film;
• and
• a second insulating film forming step for forming a second insulating film containing hydrogen in an upper layer relative to the first insulating film.

9:

• The method according to claim 5, wherein the second insulating film forming step comprises:
• a lower second insulating film forming step for forming a lower second insulating film in a lower layer at a lower forming temperature;
• and
• an upper second insulating film forming step for forming an upper second insulating film in an upper layer at a higher forming temperature.