Semiconductor element and production method for same
AssigneesTamura Corporation, National Institute of Information and Communications Technology
InventorsKohei SASAKI, Masataka HIGASHIWAKI, Man Hoi WONG
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Abstract
A semiconductor element includes a high-resistivity substrate that includes a β-Ga2O3-based single crystal including an acceptor impurity, an undoped β-Ga2O3-based single crystal layer formed on the high-resistivity substrate, and an n-type channel layer that includes a side surface surrounded by the undoped β-Ga2O3-based single crystal layer. The undoped β-Ga2O3-based single crystal layer includes an element isolation region.
Claims22
A semiconductor element, comprising:
- a high-resistivity substrate that comprises a β-Ga2O3-based single crystal including an acceptor impurity;
- an undoped β-Ga2O3-based single crystal layer formed on the high-resistivity substrate;
- and
- an n-type channel layer that comprises a side surface surrounded by the undoped β-Ga2O3-based single crystal layer,
- wherein the undoped β-Ga2O3-based single crystal layer comprises an element isolation region.
A semiconductor element, comprising:
- a high-resistivity substrate that comprises a β-Ga2O3-based single crystal comprising an acceptor impurity;
- an undoped β-Ga2O3-based single crystal layer formed on the high-resistivity substrate;
- and
- an n-type channel layer that comprises a side surface and a bottom surface on a side of the substrate that are surrounded by the undoped β-Ga2O3-based single crystal layer,
- wherein the undoped β-Ga2O3-based single crystal layer comprises an element isolation region.
A semiconductor element, comprising:
- a high-resistivity substrate that comprises a β-Ga2O3-based single crystal including an acceptor impurity;
- a low-concentration acceptor impurity-including β-Ga2O3-based single crystal layer formed on the high-resistivity substrate;
- and
- an n-type channel layer that comprises a side surface and a bottom surface on a side of the substrate that are surrounded by the low-concentration acceptor impurity-including β-Ga2O3-based single crystal layer,
- wherein the low-concentration acceptor impurity-including β-Ga2O3-based single crystal layer comprises an element isolation region.
A production method for a semiconductor element, comprising:
- forming an undoped β-Ga2O3-based single crystal layer on a high-resistivity substrate that comprises aβ-Ga2O3-based single crystal including an acceptor impurity;
- and
- forming an n-type channel layer by doping a donor impurity into a predetermined region of the undoped β-Ga2O3-based single crystal layer such that a side surface thereof is surrounded by the undoped β-Ga2O3-based single crystal layer,
- wherein the undoped β-Ga2O3-based single crystal layer comprises an element isolation region.
A production method for a semiconductor element, comprising:
- forming a low-concentration acceptor impurity-including β-Ga2O3-based single crystal layer on a high-resistivity substrate that comprises a β-Ga2O3-based single crystal including an acceptor impurity;
- and
- forming an n-type channel layer by doping a donor impurity into a predetermined region of the low-concentration acceptor impurity-including β-Ga2O3-based single crystal layer such that a side surface and a bottom surface on a side of the substrate are surrounded by the low-concentration acceptor impurity-including β-Ga2O3-based single crystal layer,
- wherein the low-concentration acceptor impurity-including β-Ga2O3-based single crystal layer comprises an element isolation region.
Dependencies are inferred from the claim text.