Thin film transistor, method for manufacturing the same, array substrate and display device
AssigneesBoe Technology Group Co., Ltd., Hefei Boe Optoelectronics Technology Co., Ltd.
InventorKuhyun PARK
Life of this patent
Estimating the term…
Abstract
A TFT is provided. The TFT includes an active layer, and the active layer includes a first active layer and a second active layer. The second active layer is made of the oxide semiconductor material, and the first active layer has conductivity greater than conductivity of the second active layer.
Claims16
A thin film transistor (TFT), comprising an active layer, wherein the active layer includes a first active layer and a second active layer, the second active layer is made of an oxide semiconductor material, and the first active layer has conductivity greater than conductivity of the second active layer.
A method for manufacturing a thin film transistor (TFT), comprising a step of forming an active layer on a base substrate, wherein the step of forming the active layer on the base substrate comprises forming a first active layer and a second active layer on the base substrate, the second active layer is made of an oxide semiconductor material, and the first active layer has conductivity greater than conductivity of the second active layer.
Dependencies are inferred from the claim text.