Enhanced substrate contact for mos transistor in an soi substrate, in particular an fdsoi substrate

An integrated electronic device, comprising:

• a semiconductive film above a buried insulating layer which is situated above a supporting substrate,
• an active zone within the semiconductive film,
• at least one first MOS transistor produced in and on the active zone and comprising a gate region situated above the active zone, the gate region having a rectilinear part situated between source and drain regions, and at least one first forked part which extends the rectilinear part,
• at least one first raised semiconductive region situated above the active zone and at least partly within said first forked part, and
• at least one first substrate contact for the first transistor electrically coupled to said first raised semiconductive region.

A device, comprising:

• a semiconductive film above a buried insulating layer which is situated above a supporting substrate,
• an active zone within the semiconductive film including an elongated source region, an elongated drain region extending in parallel with the elongate source region and a channel region between the elongated source and drain regions,
• a gate region comprising:
• a first rectilinear part extending over the channel region parallel to the elongated source and drain regions,
• a second rectilinear part extending perpendicular to the first rectilinear part over a portion of the semiconductor film where the elongated source and drain regions are not present,
• a third rectilinear part extending perpendicular to the second rectilinear part over said portion of the semiconductor film, and
• a fourth rectilinear part extending perpendicular to the second rectilinear part over said portion of the semiconductor film and spaced apart from said third rectilinear part,
• an epitaxial region on said portion of the semiconductor film and located between the third and fourth rectilinear parts, and
• a substrate contact for the transistor electrically coupled to said epitaxial region.