SILICON CARBIDE (SiC) DEVICE WITH IMPROVED GATE DIELECTRIC SHIELDING
AssigneeFairchild Semiconductor Corporation
InventorMartin DOMEIJ
Life of this patent
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Abstract
In one general aspect, an apparatus can include a silicon carbide (SiC) device can include a gate dielectric, a first doped region having a first conductivity type, a source, a body region of the first conductivity type, and a second doped region having a second conductivity type. The second doped region can have a first portion and a second portion. The first portion can be disposed between the first doped region and the body region and the second portion can be disposed between the first doped region and the gate dielectric. The first portion of the second doped region can have a width less than a width of the first doped region.
Claims20
An apparatus, comprising:
- a silicon carbide (SiC) device including a gate dielectric;
- a first doped region having a first conductivity type;
- a source;
- a body region of the first conductivity type;
- and
- a second doped region having a second conductivity type, the second doped region having a first portion and a second portion, the first portion being disposed between the first doped region and the body region and the second portion being disposed between the first doped region and the gate dielectric, the first portion of the second doped region having a width less than a width of the first doped region.
An apparatus, comprising:
- a silicon carbide (SiC) device including a gate dielectric;
- a first doped region having a first conductivity type;
- a source region;
- a body region of the first conductivity type;
- and
- a second doped region having a second conductivity type, the second doped region having a first portion disposed between the first doped region and the source region, the second doped region having a second portion disposed between the first doped region and the gate dielectric, the first doped region having a non-uniform doping profile.
A method, comprising:
- forming a first doped region, having a first conductivity type, below a gate dielectric included in a silicon carbide (SiC) device;
- forming a source region;
- forming a body region of the first conductivity type;
- and
- forming a second doped region having a second conductivity type, the second doped region having a first portion disposed between the first doped region and the source region, the second doped region having a second portion disposed between the first doped region and the gate dielectric.
Dependencies are inferred from the claim text.