Multichannel Devices with Improved Performance and Methods of Making the Same

A method of forming a transistor device, the method comprising:

• forming a superlattice structure comprising a plurality of heterostructures over a base structure by sequentially depositing each layer of the plurality of heterostructures over the base structure with one layer of each heterostructure being doped;
• etching away openings in the superlattice structure over a channel region to form a castellated region in the channel region of alternating multichannel ridges with edges and nonchannel openings;
• and
• performing a gate contact fill process to form a gate contact that wraps around and substantially surrounds the top and sides of each of the alternating multichannel ridges along at least a portion of its depth and connects each one of the alternating multichannel ridges to one another through the non-channel openings.