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US 2017/0288041 A1Published application
Method for forming a doped region in a fin using a variable thickness spacer and the resulting device
AssigneeGlobalfoundries Inc.
InventorsShesh Mani Pandey, Baofu Zhu, Francis Benistant
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Abstract
A method includes forming a fin in a semiconductor substrate. An isolation structure is formed adjacent the fin. A first portion of the fin extends above the isolation structure. A gate electrode is formed above the first portion of the fin. A fin spacer is formed on the first portion of the fin. The fin spacer covers less than 50% of a height of the first portion of the fin. An implantation process is performed in the presence of the fin spacer to form a doped region in the first portion of the fin.
Claims19
A method, comprising:
- forming a fin in a semiconductor substrate;
- forming an isolation structure adjacent said fin, wherein a first portion of said fin extends above said isolation structure;
- forming a gate insulation layer above said first portion of said fin;
- forming a gate electrode above said gate insulation layer;
- forming a spacer layer contacting said gate insulation layer on a second portion of said fin not covered by said gate electrode;
- etching said spacer layer to define a fin spacer on said second portion of said fin and to expose a portion of said gate insulation layer disposed on an upper region of said second portion of said fin, wherein said fin spacer covers less than 70% of a height of said second portion of said fin;
- and
- performing an implantation process in the presence of said fin spacer and said gate insulation layer on said upper region to form a doped region in said first portion of said fin.
5 more elements
-20. (canceled)
A method, comprising:
- forming a fin in a semiconductor substrate;
- forming an isolation structure adjacent said fin, wherein a first portion of said fin extends above said isolation structure;
- forming a gate electrode above said first portion of said fin;
- forming a fin spacer on said first portion of said fin, wherein said fin spacer covers less than 70% of a height of said first portion of said fin;
- and
- performing a tilted implantation process in the presence of said fin spacer to form a doped extension region in said first portion of said fin.
3 more elements
Dependencies are inferred from the claim text.