Back to results
US 2017/0288040 A1Published application
Method of forming sige channel formation region
AssigneesCommissariat A L'energie Atomique Et Aux Energies Alternatives, STMicroelectronics S.r.l., International Business Machines Corporation
InventorsEmmanuel Augendre, Qing Liu, Rajasekhar Venigalla
Life of this patent
Estimating the term…
Abstract
A method comprising: forming an SiGe layer on sidewalls of one or more fins of a semiconductor device by a non-selective deposition of amorphous SiGe, the fins being formed of Si or SiGe; depositing a silicon oxide layer over the SiGe layer; and forming an SiGe channel formation region within each fin by performing Ge enrichment to diffuse Ge atoms from the SiGe layer into the one or more fins.
Claims20
A method comprising:
- forming an amorphous SiGe layer on sidewalls of one or more fins of a semiconductor device by a non-selective deposition of amorphous SiGe, the fins being formed of Si or SiGe;
- crystallizing the amorphous SiGe layer following the non-selective deposition by an annealing step;
- depositing a silicon oxide layer over the crystallized SiGe layer;
- and
- forming an SiGe channel formation region within each fin by performing Ge enrichment to diffuse Ge atoms from the crystallized SiGe layer into the one or more fins.
2 more elements
(canceled)
A method comprising:
- providing one or more fins on a substrate, the fins being formed of Si or SiGe;
- exposing sidewalls of each fin down to the substrate;
- forming an amorphous SiGe layer on the exposed sidewalls of the one or more fins;
- crystallizing the amorphous SiGe layer by an annealing step;
- depositing a silicon oxide layer over the crystallized SiGe layer;
- and
- forming an SiGe channel formation region within each fin by performing Ge enrichment to diffuse Ge atoms from the crystallized SiGe layer into the one or more fins.
4 more elements
A method comprising:
- providing one or more fins on a substrate, the fins being formed of Si or SiGe, a top surface of each fin being covered by a hardmask layer;
- forming an amorphous SiGe layer on exposed sidewalls of the one or more fins;
- crystallizing the amorphous SiGe layer by an annealing step;
- depositing a silicon oxide layer over the crystallized SiGe layer;
- and
- forming an SiGe channel formation region within each fin by performing Ge enrichment to diffuse Ge atoms from the crystallized SiGe layer into the one or more fins.
3 more elements
Dependencies are inferred from the claim text.