Semiconductor memory device

A semiconductor memory device comprising:

• a conductive layer on a source side;
• a first electrode layer provided above a conductive layer;
• a second electrode layer provided between the conductive layer and the first electrode layer;
• a semiconductor layer extending through the first electrode layer in a first direction from the conductive layer to the first electrode layer;
• a first semiconductor body provided between the conductive layer and the semiconductor layer, and extending through the second electrode layer, the second semiconductor body including first impurities;
• and
• a second semiconductor body provided between the conductive layer and the first semiconductor body, the second semiconductor body including second impurities with higher concentration than a concentration of the first impurities in the first semiconductor body,
• the first semiconductor body and the second semiconductor body each including silicon as a main constituent;
• the second semiconductor body further including at least one of germanium and carbon with a higher concentration in a portion positioned at a level of a surface of the conductive layer on the second electrode side than a concentration of the at least one of germanium and carbon in an end portion of the first semiconductor body on the semiconductor layer side.