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US 2017/0288036 A1Published application
Pure boron for silicide contact
AssigneeInternational Business Machines Corporation
InventorsChia-Yu Chen, Zuoguang Liu, Sanjay C. Mehta, Tenko Yamashita
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Abstract
A semiconductor device includes a gate disposed over a substrate; a source region and a drain region on opposing sides of the gate; and a pair of trench contacts over and abutting an interfacial layer portion of at least one of the source region and the drain region; wherein the interfacial layer includes boron in an amount in a range from about 5×1021 to about 5×1022 atoms/cm2.
Claims20
A method of making a semiconductor device, the method comprising:
- forming source/drain regions on opposing sides of a gate over a substrate;
- removing portions of the source/drain regions to form trench contact openings in the source/drain regions;
- and
- depositing a conformal boron layer within the trench contact openings, the conformal boron layer forming interfacial layers within the source/drain regions.
1 more element
Dependencies are inferred from the claim text.