Back to results
US 2017/0288035 A1Published application
Pure boron for silicide contact
AssigneeInternational Business Machines Corporation
InventorsChia-Yu Chen, Zuoguang Liu, Sanjay C. Mehta, Tenko Yamashita
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a gate disposed over a substrate; a source region and a drain region on opposing sides of the gate; and a pair of trench contacts over and abutting an interfacial layer portion of at least one of the source region and the drain region; wherein the interfacial layer includes boron in an amount in a range from about 5×1021 to about 5×1022 atoms/cm2.
Claims20
A semiconductor device, comprising:
- a gate disposed over a substrate;
- a source region and a drain region on opposing sides of the gate;
- and
- a pair of trench contact openings over and abutting an interfacial layer of at least one of the source region and the drain region, the interfacial layer comprising boron;
- and
- a conformal layer comprising boron disposed within the pair of trench contact openings.
3 more elements
Dependencies are inferred from the claim text.