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US 2017/0288032 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJung-Wang Lu, Kuo Hui Chang, Mu-Tsang Lin
Life of this patent
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Abstract
Provided is a semiconductor device including a gate electrode, source and drain regions, and a spacer. The gate electrode is located over a substrate, and an angle of a base corner of the gate electrode is greater than 90 degrees. The source and drain regions are located in the substrate at sides of the gate electrode. The spacer is located at a sidewall of the gate electrode.
Claims21
A semiconductor device, comprising:
- a gate electrode, located over a substrate, wherein an angle of a base corner of the gate electrode is greater than 90 degrees;
- source and drain regions, located in the substrate at sides of the gate electrode;
- and
- a spacer, located at a sidewall of the gate electrode,
- wherein an outer sidewall of the spacer is a vertical surface and is opposite to the sidewall of the gate electrode.
2 more elements
A semiconductor device, comprising:
- a gate structure, located over a substrate, wherein the gate structure comprises a wide middle gate electrode;
- source and drain regions, located in the substrate at sides of the gate structure;
- and
- a spacer, located at a sidewall of the gate structure, wherein the spacer has a neck region between a top and a bottom of the spacer.
1 more element
14-20. (canceled)
A semiconductor device, comprising:
- a gate structure, located over a substrate, wherein the gate structure comprises a wide middle gate electrode;
- source and drain regions, located in the substrate at sides of the gate structure;
- and
- a spacer, located at a sidewall of the gate structure,
- wherein at least a portion of a side surface of the wide middle gate electrode is a curved surface.
2 more elements
Dependencies are inferred from the claim text.