Thin film transistor, method of manufacturing thin film transistor, and display

A method of manufacturing a thin film transistor, the method comprising:

• forming a gate electrode;
• forming an insulation film on the gate electrode;
• forming a semiconductor layer that faces the gate electrode with the insulation film in between;
• forming a source-drain wiring layer that is electrically coupled to the semiconductor layer, wherein a first wiring layer and a second wiring layer are formed in this order as the source-drain wiring layer, the first wiring layer being made of a transparent electroconductive film, the second wiring layer being overlapped with a portion of the first wiring layer;
• and
• forming the semiconductor layer after the forming of the second wiring layer.

A display provided with a thin film transistor, the thin film transistor comprising:

• a gate electrode;
• an insulation film disposed on the gate electrode;
• a semiconductor layer facing the gate electrode with the insulation film in between;
• and
• a source-drain wiring layer electrically coupled to the semiconductor layer, and including a first wiring layer and a second wiring layer, the first wiring layer being in contact with the semiconductor layer between the semiconductor layer and the insulation film and being configured of a transparent electroconductive film, the second wiring layer being overlapped with a portion of the first wiring layer,
• another semiconductor layer made of a material same as a material of the semiconductor layer being stacked on the second wiring layer.