Composite oxide semiconductor and method for manufacturing the same

A method for manufacturing a composite oxide semiconductor, comprising:

• a first step of placing a substrate in a deposition chamber;
• a second step of introducing one or both of an argon gas and an oxygen gas into the deposition chamber;
• a third step of applying voltage to a target comprising indium, an element M, zinc, and oxygen;
• and
• a fourth step of depositing the composite oxide semiconductor from the target onto the substrate,
• wherein the fourth step comprises:
• a first step in which the element M and the zinc are preferentially sputtered from the target;
• and
• a second step in which the indium has a cluster-like shape and then the indium with the cluster-like shape is sputtered from the target, and
• wherein the M represents Al, Ga, Y, or Sn.

A method for manufacturing a composite oxide semiconductor, comprising:

• a first step of placing a substrate in a deposition chamber;
• a second step of introducing, into the deposition chamber, a deposition gas comprising an argon gas and not comprising an oxygen gas;
• a third step of applying voltage to a target comprising indium, an element M, zinc, and oxygen;
• and
• a fourth step of depositing the composite oxide semiconductor from the target onto the substrate,
• wherein the fourth step comprises:
• a first step in which the element M and the zinc are preferentially sputtered from the target;
• and
• a second step in which the indium has a cluster-like shape and then the indium with the cluster-like shape is sputtered from the target, and
• wherein the M represents Al, Ga, Y, or Sn.