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AssigneeToyota Jidosha Kabushiki Kaisha
InventorsJun SAITO, Atsushi ONOGI, Sachiko AOI, Shoji MIZUNO
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A semiconductor device may include a semiconductor substrate in which a semiconductor element is provided, and an insulation film provided on the semiconductor substrate, in which the semiconductor substrate may include a first portion and a second portion which has a thickness thinner than a thickness of the first portion, an upper surface of the second portion may be positioned lower than an upper surface of the first portion, a recess extending in a thickness direction of the semiconductor substrate may be provided on the upper surface of the second portion located at a position where the first portion and the second portion adjoin to each other, and the insulation film may extend over from the first portion to the second portion, and fill the recess.
A semiconductor device comprising:
A method of manufacturing a semiconductor device utilizing a semiconductor substrate that comprises a first portion and a second portion which has a thickness thinner than a thickness of the first portion, wherein an upper surface of the second portion is located lower than an upper surface of the first portion,
Dependencies are inferred from the claim text.