Photosensor and display device having the same

A display device comprising:

• a photosensor,
• a transistor;
• a planarizing layer;
• and
• a light-emitting element, wherein
• the photosensor comprises:
• a first light-shielding layer provided on an insulating surface;
• a first insulating layer covering the first light-shielding layer;
• a semiconductor layer provided on the first insulating layer, the semiconductor layer being connected to a first electrode and a second electrode, and the semiconductor layer configuring a diode;
• a second insulating layer covering the semiconductor layer;
• an opening provided in the second insulating layer so as to surround the semiconductor layer as viewed from a planar direction and the opening reaching at least the first insulating layer;
• and
• a second light-shielding layer filling the opening,
• the transistor comprises another semiconductor layer of the same layer as the semiconductor layer,
• the light-emitting element is provided on the planarizing layer and electrically connected to the transistor,
• the planarizing layer is provided on the second light-shielding layer, and
• at least one of a gate electrode, a source electrode, and a drain electrode of the transistor is provided to the same layer as the first light-shielding layer or the second light-shielding layer.

A photo detection circuit comprising:

• a photosensor;
• a transistor;
• and
• a capacitor, wherein
• the photosensor comprises:
• a first light-shielding layer provided on a first insulating surface;
• a first insulating layer covering the first light-shielding layer;
• a first semiconductor layer provided on the first insulating layer;
• the first semiconductor layer being connected to a first electrode and a second electrode, the first semiconductor layer configuring a first diode,
• a second insulating layer covering the first semiconductor layer;
• a first opening provided in the second insulating layer so as to surround the first semiconductor layer as viewed from a planar direction and the first opening reaching at least the first insulating layer;
• and
• a second light-shielding layer covering at least a side wall of the first opening,
• the transistor has an end connected to a node electrically connected to the first electrode or the second electrode, another end connected to a first ground, and a gate electrode connected to a reset signal line, and the gate electrode is configured to be applied with a reset signal via the reset signal line, and
• the capacitor is connected between the node and the first ground and is connected in series to the photosensor via the node.