Strain assisted spin torque switching spin transfer torque memory

An apparatus comprising:

• a magnetic tunneling junction (MTJ) having a free magnetic layer;
• a piezoelectric layer;
• and
• a conducting strain transfer layer coupled to the free magnetic layer and the piezoelectric layer.

A system comprising:

• a processor;
• a magnetic random access memory (MRAM) coupled to the processor, the MRAM having a bit-cell including:
• a magnetic tunneling junction (MTJ) having a free magnetic layer;
• a piezoelectric layer;
• and
• a conducting strain transfer layer coupled to the free magnetic layer and the piezoelectric layer;
• and
• a wireless interface for allowing the processor to couple to another device.

An apparatus comprising:

• a transistor;
• a conductive strain transfer layer coupled to the transistor;
• and
• a Magnetic Tunnel Junction (MTJ) device having a free magnetic layer coupled to the conductive strain transfer layer.