Image sensor and electronic device including the same

An image sensor, comprising

• a semiconductor substrate, and
• a photoelectric conversion device on the semiconductor substrate, the photoelectric conversion device including a plurality of pixel electrodes, a light absorption layer, and a common electrode, the plurality of pixel electrodes including a first pixel electrode and a second pixel electrode,
• wherein the photoelectric conversion device includes
• a first photoelectric conversion region defined by an overlapping region of the first pixel electrode, the light absorption layer, and the common electrode, the first photoelectric conversion region being associated with a first photoelectric sensitivity, and
• a second photoelectric conversion region defined by an overlapping region of the second pixel electrode, the light absorption layer, and the common electrode, the second photoelectric conversion region being associated with a second photoelectric sensitivity, and
• wherein the first photoelectric sensitivity is greater than the second photoelectric sensitivity.