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US 2017/0287970 A1Published application
Method for manufacturing semiconductor device, and semiconductor device
AssigneeRenesas Electronics Corporation
InventorToshifumi IWASAKI
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor device with improved performance. In a method for manufacturing a semiconductor device, after forming a gate electrode of a transfer transistor over a p-type well, a photodiode is formed in one part of the p-type well positioned on one side with respect to the gate electrode. Then, a cap insulating film including silicon and nitrogen is formed over the photodiode before implanting impurity ions for formation of an n-type low-concentration semiconductor region of the transfer transistor, into the other part of the p-type well positioned on a side opposite to the one side with respect to the gate electrode.
Claims3
A semiconductor device, comprising:
- a semiconductor substrate;
- a first semiconductor region of a first conduction type formed on a side of a main surface of the semiconductor substrate;
- a first gate electrode formed over the first semiconductor region via a first gate insulating film;
- a second semiconductor region of a second conduction type opposite to the first conduction type, formed in a first part of the first semiconductor region positioned on a first side with respect to the first gate electrode;
- a third semiconductor region of the second conduction type, formed in a second part of the first semiconductor region positioned on a side opposite to the first side with respect to the first gate electrode;
- a first insulating film integrally formed over the first part, a first side surface on the first side of the first gate electrode, and a first upper surface of the first gate electrode;
- and
- a first sidewall spacer formed over the first side surface via the first insulating film,
- wherein a photodiode is formed by the first semiconductor region and the second semiconductor region,
- wherein a transfer transistor for transferring electric charges generated by the photodiode is formed by the first gate electrode and the third semiconductor region, and
- wherein the first insulating film includes silicon and nitrogen.
8 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a first semiconductor region of a first conduction type formed in a first region on a side of a main surface of the semiconductor substrate;
- a second semiconductor region of a second conduction type formed in a second region on the side of the main surface of the semiconductor substrate;
- a first gate electrode formed over the first semiconductor region via a first gate insulating film;
- a second gate electrode formed over the second semiconductor region via a second gate insulating film;
- a third semiconductor region of a third conduction type opposite to the first conduction type, formed in a first part of the first semiconductor region positioned on a first side with respect to the first gate electrode;
- a fourth semiconductor region of the third conduction type, formed in a second part of the first semiconductor region positioned on a side opposite to the first side with respect to the first gate electrode;
- a fifth semiconductor region of a fourth conduction type opposite to the second conduction type, formed in a third part of the second semiconductor region positioned on a second side with respect to the second gate electrode;
- a first insulating film integrally formed over the first part, a first side surface on the first side of the first gate electrode, and a first upper surface of the first gate electrode;
- and
- a second insulating film covering the first insulating film, the first gate electrode, the fourth semiconductor region, the second gate electrode, and the fifth semiconductor region,
- wherein a photodiode is formed by the first semiconductor region and the third semiconductor region,
- wherein a transfer transistor for transferring electric charges generated by the photodiode is formed by the first gate electrode and the fourth semiconductor region,
- wherein the first insulating film includes silicon and nitrogen, and
- wherein the second insulating film is in contact with each of the part of the first insulating film formed over the first side surface of the first gate electrode, a second side surface on a side opposite to the first side of the first gate electrode, and a third side surface on the second side of the second gate electrode.
12 more elements
Dependencies are inferred from the claim text.