Image Sensor Contact Enhancement

A method of image sensor fabrication, comprising:

• providing a photodiode included in a plurality of photodiodes disposed in semiconductor material and a floating diffusion disposed in the semiconductor material;
• providing peripheral circuitry disposed in the semiconductor material including a first electrical contact to the semiconductor material;
• forming a transfer gate disposed to transfer image charge from the photodiode to the floating diffusion;
• depositing an isolation layer on a surface of the semiconductor material;
• etching contact holes in the isolation layer;
• forming, in the contact holes, a first silicide layer disposed on the floating diffusion, a second silicide layer disposed on the transfer gate, and a third silicide layer disposed on the first electrical contact to the semiconductor material by depositing a silicon layer in the contact holes and metalizing the silicon layer, wherein the silicon layer includes undoped silicon when deposited;
• and
• forming metal interconnects in the isolation layer, wherein the metal interconnects are electrically coupled to the first silicide layer, the second silicide layer, and the third silicide layer, wherein forming the metal interconnects includes depositing the metal interconnects in the contact holes.