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AssigneeRenesas Electronics Corporation
InventorsKoji IIZUKA, Fumitoshi TAKAHASHI
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The semiconductor device includes a semiconductor substrate having a main surface and a back surface, an device isolation film, formed over the main surface of the semiconductor substrate and having a first surface making contact with the main surface and a second surface opposed to the first surface, a plate electrode disposed over the device isolation film in contact with the second surface of the device isolation film, and a pad electrode disposed adjacent to the first surface of the device isolation film and making contact with the plate electrode. The semiconductor substrate has a first opening that passes therethrough from the back surface to the main surface and exposes the device isolation film. The device isolation film has a second opening located in the first opening and exposes a part of the plate electrode. The pad electrode is formed in the second opening and extends over the first surface of the device isolation film.
A semiconductor device comprising:
A method for fabricating a semiconductor device comprising the steps of:
Dependencies are inferred from the claim text.