Semiconductor device and semiconductor device manufacturing method
AssigneeLapis Semiconductor Co., Ltd.
InventorHIROSHI SHIBATA
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a semiconductor device including: a light receiving portion provided in a semiconductor layer of a first conductor type, the light receiving portion being of a second conductor type that is different from the first conductor type a buffer layer provided at a light incidence side of the light receiving portion, the buffer layer being of the first conductor type: and a low refractive index layer provided at a light incidence side of the buffer layer, the low refractive index layer having a lower refractive index than refractive indices of the semiconductor layer and the buffer layer.
Claims10
A semiconductor device comprising:
- a light receiving portion provided in a semiconductor layer of a first conductor type, the light receiving portion being of a second conductor type that is different from the first conductor type;
- a buffer layer provided at a light incidence side of the light receiving portion, the buffer layer being of the first conductor type;
- and
- a low refractive index layer provided at a light incidence side of the buffer layer, the low refractive index layer having a lower refractive index than refractive indices of the semiconductor layer and the buffer layer.
A semiconductor device manufacturing method comprising:
- forming, in a semiconductor layer of a first conductor type, a light receiving portion of a second conductor type that is different from the first conductor type;
- forming, at a light incidence side of the light receiving portion, a buffer layer of the first conductor type;
- and
- forming, at a light incidence side of the buffer layer, a low refractive index layer that has a lower refractive index than refractive indices of the semiconductor layer and the buffer layer.
Dependencies are inferred from the claim text.