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US 2017/0287953 A1Published application
Field-effect transistor devices having proximity contact features
AssigneeSkyworks Solutions, Inc.
InventorsHailing Wang, Hanching Fuh, Dylan Charles Bartle, Jerod F. Mason
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Abstract
Field-effect transistor (FET) devices are described herein that include an insulator layer, a field-effect transistor implemented over the insulator layer, a substrate layer implemented under the insulator layer, and a proximity electrode that extends at least partially through the insulator layer and positioned from the FET by a distance that is less than about 5 μm. The FET device can include one or more substrate contact features as well.
Claims20
A radio-frequency (RF) device comprising:
- an insulator layer;
- a field-effect transistor (FET) implemented over the insulator layer;
- a substrate layer implemented under the insulator layer;
- and
- a proximity electrode implemented to extend at least partially through the insulator layer, and positioned to be laterally offset from the FET by an offset distance that is less than 5 μm.
2 more elements
A radio-frequency (RF) module comprising:
- a packaging substrate configured to receive a plurality of devices;
- and
- a switching device mounted on the packaging substrate, the switching device including a field-effect transistor (FET) implemented over an insulator layer and a substrate layer implemented under the insulator layer, the switching device further including a proximity electrode implemented to extend at least partially through the insulator layer, and positioned to be laterally offset from the FET by an offset distance that is less than 5 μm.
A wireless device comprising:
- a transceiver configured to process radio-frequency (RF) signals;
- an RF module in communication with the transceiver, the RF module including a switching device having a field-effect transistor (FET) implemented over an insulator layer and a substrate layer implemented under the insulator layer, the switching device further including a proximity electrode implemented to extend at least partially through the insulator layer, and positioned to be laterally offset from the FET by an offset distance that is less than 5 μm;
- and
- an antenna in communication with the RF module, the antenna configured to facilitate transmitting and/or receiving of the RF signals.
1 more element
Dependencies are inferred from the claim text.