Method to improve crystalline regrowth

A deep trench capacitor in a semiconductor substrate, comprising:

• a buried plate disposed about an exterior portion of a trench located within the substrate;
• a node dielectric disposed over the buried plate;
• an electrode disposed over the node dielectric;
• a conductive strap electrically connected to the electrode and a single crystal region of the substrate;
• and
• a conductive barrier layer between the conductive strap and the single crystal region, wherein the conductive barrier layer comprises carbon, hydrogen, cobalt or titanium nitride.

A method of forming a semiconductor device comprising:

• forming an electrode in a semiconductor substrate, the semiconductor substrate
• including a single crystal region;
• forming a conductive barrier layer by depositing a layer comprising carbon, germanium or phosphorus over at least one of the electrode and the single crystal region;
• and
• forming a conductive strap to electrically connect the electrode with the single crystal region, wherein the conductive strap is formed over the conductive barrier layer, wherein forming the conductive barrier layer comprises epitaxially depositing a layer of carbon-doped silicon.