Device, manufacturing method thereof, and electronic device

A method for manufacturing a device, comprising the steps of:

• forming a first insulating film over a substrate;
• forming a second insulating film over the first insulating film;
• removing part of the first insulating film and first part of the second insulating film to form a first opening;
• forming a first conductor in the first opening and over a top surface of the second insulating film;
• removing part of the first conductor by a chemical mechanical polishing method to make a surface of the first conductor parallel to a bottom surface of the substrate, so that a second conductor is formed in the first opening;
• forming a third insulating film over the second insulating film and the second conductor;
• removing second part of the second insulating film and part of the third insulating film to form a second opening so as to expose part of a top surface of the second conductor and part of a side surface of the second conductor;
• forming a third conductor over a top surface of the third insulating film and in the second opening so as to be in contact with the second conductor;
• and
• removing part of the third conductor to form a fourth conductor.

A method for manufacturing a device, comprising the steps of:

• forming a first insulating film over a substrate;
• forming a second insulating film over the first insulating film;
• removing part of the first insulating film and first part of the second insulating film to form a first opening;
• forming a first conductor in the first opening and over a top surface of the second insulating film;
• removing part of the first conductor by a chemical mechanical polishing method to make a surface of the first conductor parallel to a bottom surface of the substrate, so that a second conductor is formed in the first opening;
• forming a third insulating film over the second insulating film and the second conductor;
• removing second part of the second insulating film and part of the third insulating film to form a second opening so as to expose part of a top surface of the second conductor and part of a side surface of the second conductor;
• forming a third conductor over a top surface of the third insulating film and in the second opening so as to be in contact with the second conductor;
• and
• removing part of the third conductor by a chemical mechanical polishing method to make a surface of the third conductor parallel to the bottom surface of the substrate, so that a fourth conductor is formed in the second opening.