Variable buried oxide thickness for silicon-on-insulator devices

A method for fabricating a radio-frequency device, the method comprising:

• providing or forming a silicon-on-insulator substrate that includes an insulator layer and a handle wafer;
• and
• forming a plurality of field-effect transistors over the insulator layer, such that each transistor is separated from the handle wafer by a corresponding portion of the insulator layer, the corresponding portion of the insulator layer having an average thickness value such that the average thickness values associated with the plurality of transistors form a non-uniform distribution.

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A radio-frequency module comprising:

• a packaging substrate configured to receive a plurality of devices;
• and
• a switching device mounted on the packaging substrate, the switching device including a silicon-on-insulator substrate having an insulator layer and a handle wafer, the switching device further including a plurality of field-effect transistors implemented over the insulator layer, each transistor separated from handle wafer by a corresponding portion of the insulator layer, the corresponding portion of the insulator layer having an average thickness value such that the average thickness values associated with the plurality of transistors form a non-uniform distribution.

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