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US 2017/0287934 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeRenesas Electronics Corporation
InventorTatsuya USAMI
Life of this patent
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Abstract
An optical waveguide for optical signals is formed in a semiconductor layer of an SOI substrate, a heater for heating the optical waveguide is formed on a silicon oxide film which covers the optical waveguide, and wirings for supplying power to the heater are connected to both ends of the heater. Each of the wirings is constituted of a laminated film of a bottom barrier metal film, an aluminum-copper alloy film serving as a main conductive film and a top barrier metal film, and the heater is constituted integrally with the bottom barrier metal film constituting a part of each of the wirings.
Claims11
A semiconductor device comprising:
- an SOI substrate including a support substrate, a silicon oxide layer formed over the support substrate, and a semiconductor layer formed over the silicon oxide layer;
- an optical waveguide formed in the semiconductor layer of the SOI substrate;
- a heater formed on a first insulating film which covers the optical waveguide;
- and
- a first wiring and a second wiring which are formed on the first insulating film and are electrically connected to the heater,
- wherein each of the first wiring and the second wiring is constituted of a laminated film including a barrier metal film and a main conductive film, and
- the heater is formed to include the barrier metal film constituting a part of each of the first wiring and the second wiring.
4 more elements
A manufacturing method of a semiconductor device comprising the steps of:
- (a) preparing an SOI substrate including a support substrate, a silicon oxide layer formed over the support substrate, and a semiconductor layer formed over the silicon oxide layer;
- (b) patterning the semiconductor layer, thereby forming an optical waveguide made of the semiconductor layer on the silicon oxide layer;
- (c) forming a first insulating film which covers the optical waveguide, over the silicon oxide layer;
- and
- (d) forming a heater which heats the optical waveguide and a first wiring and a second wiring which are electrically connected to the heater, on the first insulating film,
- wherein the step (d) includes the steps of:
- (d-1) sequentially forming a first barrier metal film, a main conductive film, a second barrier metal film and a second insulating film over the first insulating film;
- (d-2) etching the second insulating film with using a first photoresist film as a mask, thereby leaving the second insulating film in a region where the first wiring is formed and a region where the second wiring is formed;
- (d-3) after the step (d-2), etching the second barrier metal film and the main conductive film with using the second insulating film as a mask, thereby leaving the second barrier metal film and the main conductive film in the region where the first wiring is formed and the region where the second wiring is formed;
- (d-4) after the step (d-3), covering the first barrier metal film exposed in a region where the heater is formed, with a second photoresist film;
- and
- (d-5) etching the first barrier metal film with using the second photoresist film, the second insulating film left in the region where the first wiring is formed and the second insulating film left in the region where the second wiring is formed, as a mask, thereby forming the first wiring constituted of a laminated film of the first barrier metal film, the main conductive film and the second barrier metal film, the second wiring constituted of a laminated film of the first barrier metal film, the main conductive film and the second barrier metal film, and the heater whose portion extending between the first wiring and the second wiring is constituted integrally with the first barrier metal film constituting a part of the first wiring and the first barrier metal film constituting a part of the second wiring, on the first insulating film.
9 more elements
A manufacturing method of a semiconductor device comprising the steps of:
- (a) preparing an SOI substrate including a support substrate, a silicon oxide layer formed over the support substrate, and a semiconductor layer formed over the silicon oxide layer;
- (b) patterning the semiconductor layer, thereby forming an optical waveguide made of the semiconductor layer on the silicon oxide layer;
- (c) forming a first insulating film which covers the optical waveguide, over the silicon oxide layer;
- and
- (d) forming a heater which heats the optical waveguide and a first wiring and a second wiring which are electrically connected to the heater, on the first insulating film,
- wherein the step (d) includes the steps of:
- (d-1) sequentially forming a first barrier metal film, a main conductive film and a second barrier metal film over the first insulating film;
- (d-2) forming a first photoresist film through which the second barrier metal film in a region where the heater is formed is exposed, on the second barrier metal film;
- (d-3) removing the second barrier metal film and the main conductive film in the region where the heater is formed, by etching using the first photoresist film as a mask, thereby exposing the first barrier metal film in the region where the heater is formed;
- (d-4) after the step (d-3), forming a third barrier metal film on each of the second barrier metal film left on the first insulating film and the first barrier metal film exposed in the region where the heater is formed;
- (d-5) forming a second photoresist film which covers a region where the first wiring is formed, a region where the second wiring is formed and the region where the heater is formed, on the third barrier metal film;
- and
- (d-6) etching the third barrier metal film, the second barrier metal film, the main conductive film and the first barrier metal film with using the second photoresist film as a mask, thereby forming the first wiring constituted of a laminated film of the first barrier metal film, the main conductive film, the second barrier metal film and the third barrier metal film, the second wiring constituted of a laminated film of the first barrier metal film, the main conductive film, the second barrier metal film and the third barrier metal film, and the heater constituted of a laminated film of the first barrier metal film and the third barrier metal film and electrically connected to the first wiring and the second wiring, on the first insulating film.
10 more elements
Dependencies are inferred from the claim text.