Semiconductor device

A semiconductor device, comprising:

• source select lines, word lines, drain select lines, and a bit line stacked on a substrate in which a first cell string region and a second cell string region are defined;
• channel layers and memory layers vertically passing through the source select lines, the word lines, and the drain select lines in each of the first cell string region and the second cell string region;
• and
• a common source line vertically passing through the source select lines, the word lines, and the drain select lines at centers of the first cell string region and the second cell string region, and extended to a lower side of the source select lines.

A semiconductor device, comprising:

• first insulating layers and first conductive layers alternately stacked on a substrate;
• a U-shaped channel structure vertically passing through first insulating layers and first conductive layers, wherein the U-shaped channel structure includes a pipe region defined under the U-shaped channel structure, and a first cell string region and a second cell string region defined at both sides of the U-shaped channel structure,
• a memory layer formed along an inside surface of the U-shaped channel structure;
• a channel layer formed along an inside surface of the memory layer;
• a second conductive layer filling the U-shaped channel structure of the pipe region, wherein the first conductive layer contacts the channel layer in the pipe region;
• a second insulating layer filing the U-shaped channel structure of the first and second regions, wherein the first insulating layer contacts the channel layer in the first and second cell string regions;
• a slit formed at a center of the U-shaped channel structure, wherein the slit exposes the memory layer in the pipe region;
• and
• a common source line formed in the slit.