Semiconductor device and manufacturing method for same
AssigneeFujitsu Semiconductor Limited
InventorWensheng Wang
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Abstract
A semiconductor device and a manufacturing method for the same are provided in such a manner that the oxygen barrier film and the conductive plug in the base of a capacitor are prevented from being abnormally oxidized. A capacitor is formed by layering a lower electrode, a dielectric film including a ferroelectric substance or a high dielectric substance, and an upper electrode in this order on top of an interlayer insulation film with at least a conductive oxygen barrier film in between, and at least a portion of a side of the conductive oxygen barrier film is covered with an oxygen entering portion or an insulating oxygen barrier film.
Claims8
A manufacturing method for a semiconductor device, characterized by comprising:
- embedding a conductive plug electrically connected to an impurity region in an interlayer insulation film provided on a semiconductor substrate in which the impurity region is formed;
- forming at least a conductive oxygen barrier film, a lower electrode, a dielectric film including a ferroelectric substance or a high dielectric substance, and an upper electrode on top of the interlayer insulation film in which the conductive plug is embedded;
- forming a capacitor with the conductive oxygen barrier film by etching the conductive oxygen barrier film, the lower electrode, the dielectric film including a ferroelectric substance or a high dielectric substance, and the upper electrode;
- and forming an oxide film in at least a portion of a side of the conductive oxygen barrier film.
Dependencies are inferred from the claim text.