Method of manufacturing capacitor structure

A method of manufacturing a semiconductor device, the method comprising:

• forming a first source/drain region in a substrate;
• forming a first interlevel dielectric layer on the substrate;
• forming a first conducting plug in the first interlevel dielectric layer such that the conducting plug is electrically coupled to the first source/drain region;
• forming a crown oxide on the first interlevel dielectric layer;
• forming a deep trench in the crown oxide to expose the first conducting plug;
• forming a spacer in the deep trench such that the spacer is thicker at a bottom of the deep trench than at a top of the deep trench;
• and
• forming a metal-insulator-metal film in the deep trench.

A method of manufacturing a semiconductor device, the method comprising:

• forming an etch stop layer over an interlevel dielectric layer;
• forming a crown oxide on the etch stop layer;
• forming a deep trench in the crown oxide;
• forming a spacer in the deep trench;
• selectively etching the spacer to remove the spacer at a top of the deep trench;
• and
• forming a metal-insulator-metal film in the deep trench.