Method and Apparatus for Forming Boron-Doped Silicon Germanium Film, and Storage Medium
AssigneeTokyo Electron Limited
InventorMitsuhiro OKADA
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Abstract
A method for forming a boron-doped silicon germanium film on a base film in a surface of an object to be processed includes: forming a seed layer by adsorbing a chlorine-free boron-containing gas to a surface of the base film; and forming a boron-doped silicon germanium film on the surface of the base film to which the seed layer is adsorbed by using a silicon raw material gas, a germanium raw material gas, and a boron doping gas through a chemical vapor deposition method.
Claims15
A method for forming a boron-doped silicon germanium film on a base film formed on a surface of an object to be processed, the method comprising:
- forming a seed layer by adsorbing a chlorine-free boron-containing gas to a surface of the base film;
- and
- forming a boron-doped silicon germanium film on the surface of the base film to which the seed layer is adsorbed by using a silicon raw material gas, a germanium raw material gas, and a boron doping gas through a chemical vapor deposition method.
An apparatus for forming a boron-doped silicon germanium film on a base film formed on a surface of a substrate to be processed, the apparatus comprising:
- a processing vessel that receives the substrate to be processed;
- a gas supply part that supplies a predetermined gas to an interior of the processing vessel;
- a heating mechanism that heats the interior of the processing vessel;
- an exhaust mechanism that exhausts the interior of the processing vessel to a depressurized state;
- and
- a controller that controls the gas supply part, the heating mechanism, and the exhaust mechanism,
- wherein the controller controls:
- adjusting the interior of the processing vessel to a predetermined depressurized state by means of the exhaust mechanism and to a predetermined temperature by means of the heating mechanism;
- forming a seed layer by supplying a chlorine-free boron-containing gas from the gas supply part to the interior of the processing vessel in order for the chlorine-free boron-containing gas to be adsorbed to a surface of the base film;
- and
- forming a boron-doped silicon germanium film, by means of a chemical vapor deposition method, on the surface of the base film to which the seed layer is adsorbed by supplying a silicon raw material gas, a germanium raw material gas, and a boron doping gas from the gas supply part.
Dependencies are inferred from the claim text.