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US 2017/0287911 A1Published application
Multi-finger devices in mutliple-gate-contacted-pitch, integrated structures
AssigneeGlobalfoundries Inc.
InventorsEdward J. Nowak, Brent A. Anderson, Robert R. Robison
Life of this patent
Estimating the term…
Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to multi-finger devices in multiple-gate-contacted-pitch, integrated structures and methods of manufacture. The structure includes: a first plurality of fin structures formed on a substrate having a channel surface in a {110} plane; and a second plurality of fin structures formed on the substrate with a channel surface in a {100} plane, positioned in relation to the first plurality of fin structures.
Claims22
A structure comprising:
- a first plurality of vertical transport fin structures formed on a substrate having a channel surface in a {110} plane, orthogonal to that of a substrate surface;
- and
- a second plurality of vertical transport fin structures formed on the substrate with a channel surface in a {100} plane, positioned in relation to the first plurality of fin structures, and a same transport direction as the first plurality of fin structures, wherein the second plurality of vertical transport fin structures are positioned orthogonal in relation to the first plurality of vertical transport fin structures.
(canceled)
A structure, comprising:
- a plurality of first vertical finFET gate structures with a sidewall of a vertical channel region in a {100} plane;
- and
- a plurality of second vertical finFET gate structures orthogonal to the plurality of first vertical finFET gate structures, the plurality of second vertical finFET gate structures having a sidewall of a vertical channel region in a {110} plane.
-20. (canceled)
Dependencies are inferred from the claim text.