Electrostatic discharge protection apparatus and applications thereof

A memory device, comprising:

• an ESD protection apparatus comprising:
• a semiconductor substrate, having a doping well with a first conductivity, wherein one end of the doping well is grounded;
• a first gate structure, disposed on the doping well;
• a first doping region, having a second conductivity, disposed in the doping well and adjacent to the first gate structure, and electrically connected to a pad ;
• a second doping region, having the second conductivity, disposed in the doping well and adjacent to the first gate structure;
• and
• a third doping region, having the first conductivity, disposed in the doping well, and forming a P/N junction interface with the second doping region;
• wherein the second doping region and the third doping region respectively have a doping concentration substantially greater than that of the doping well;
• and
• a memory cell array electrically connected to the pad of the ESD protection apparatus.

An EDS protection method, comprising:

• providing an EDS protection apparatus electrically connected to an internal circuit, wherein the EDS protection apparatus comprises:
• a semiconductor substrate, having a doping well with a first conductivity, wherein one end of the doping well is grounded;
• a first gate structure, disposed on the doping well;
• a first doping region, having a second conductivity, disposed in the doping well and adjacent to the first gate structure, and electrically connected to a pad;
• a second doping region, having the second conductivity, disposed in the doping well and adjacent to the first gate structure;
• and
• a third doping region, having the first conductivity, disposed in the doping well, and forming a P/N junction interface with the second doping region;
• wherein the second doping region and the third doping region respectively have a doping concentration substantially greater than that of the doping well;
• and
• applying the ESD protection apparatus to direct an ESD current passing through the substrate and then flowing into the ground, when an ESD current is imposed on the pad.