High voltage esd device for finfet technology

An electrostatic discharge (ESD) protection device, comprising:

• a substrate structure comprising:
• a semiconductor substrate;
• a plurality of fins on the semiconductor substrate and comprising a first fin and a second fin;
• a first doped region and a second doped region laterally adjacent to each other and having different conductivity types, wherein:
• the first doped region comprises a first portion of the semiconductor substrate and a first region of the first fin on the first portion of the semiconductor substrate,
• the second doped region comprises a second portion of the semiconductor substrate, a second region of the first fin on the second portion of the semiconductor substrate, and the second fin on the second doped region;
• a first gate structure on a portion of a first region of the first fin and on a portion of a second region of the first fin;
• a first highly doped region in the first region of the first fin and having a same conductivity type as the first doped region, and a dopant concentration of the first highly doped region being higher than a dopant concentration of the first doped region;
• and
• a second highly doped region in the second fin and having a same conductivity type as the second doped region, and a dopant concentration of the second highly doped region being higher than a dopant concentration of the second doped region.