Electrostatic discharge protection apparatus and applications thereof

An ESD protection method, comprising:

• providing an ESD protection apparatus electrically connected to an internal circuit, the ESD protection apparatus comprising:
• a semiconductor substrate;
• a first well having a first conductivity, disposed in the semiconductor substrate;
• a second well having a second conductivity, disposed in the semiconductor substrate;
• a first doping region having the second conductivity and disposed in the first well;
• a second doping region having the first conductivity, at least partially disposed in the first well, and surrounding the first doping region;
• a third doping region having the first conductivity, disposed in the second well and adjacent to the second doping region;
• and
• a fourth doping region having the second conductivity, disposed in the second well and adjacent to the third doping region;
• wherein the first doping region, the first well and the second well are integrated to form a first parasitic bipolar junction transistor (BJT);
• the third doping region, the first well and the second well are integrated to form a second parasitic BJT;
• and the first parasitic BJT and the second parasitic BJT have different majority carriers;
• and
• when the internal circuit is subjected to an ESD stress, directing ESD current to the ground the by the ESD protection apparatus through the first parasitic BJT and the second parasitic BJT.