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US 2017/0287894 A1Published application
Devices with an embedded zener diode
AssigneeAllegro MicroSystems, LLC
InventorsChung C. Kuo, Maxim Klebanov
Life of this patent
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Abstract
In one aspect, a silicon-controlled rectifier (SCR) includes a Zener diode embedded in the SCR. In another aspect, a laterally diffused metal oxide semiconductor (LDMOS) includes a Zener diode embedded in the LDMOS. In a further aspect, a lateral insulated-gate bipolar transistor (IGBT) includes a Zener diode embedded in the IGBT.
Claims33
A silicon-controlled rectifier (SCR) comprising:
- a Zener diode;
- an n-type region;
- a first P+-type region extending into the n-type region;
- a first N+-type region extending into the n-type region;
- a p-type well extending into the n-type region;
- a second N+-type region extending into the p-type well;
- and
- a second P+-type region extending into the p-type well,
- wherein the Zener diode is embedded between the first and second N+-type regions and extending entirely into the n-type region.
6 more elements
(canceled)
16-31. (canceled)
A silicon-controlled rectifier (SCR) comprising:
- a Zener diode;
- an p-type region;
- a first N+-type region extending into the p-type region;
- a first P+-type region extending into the p-type region;
- a n-type well extending into the p-type region;
- a second P+-type region extending into the n-type well;
- and
- a second N+-type region extending into the n-type well,
- wherein the Zener diode is embedded between the first and second P+-type regions and extending entirely into the p-type region.
6 more elements
An integrated circuit comprising:
- a means for controlling an electrostatic discharge without snapback, the means comprising a silicon-controlled rectifier (SCR) with an embedded Zener diode.
Dependencies are inferred from the claim text.