Semiconductor package structure

A semiconductor device package, comprising:

• a first semiconductor device package and a second semiconductor device package bonded via a honing structure, wherein the bonding structure includes:
• a metal pad embedded in the first semiconductor device package;
• a conductive element thrilled on the metal pad and embedded in a molding compound, wherein the conductive element has a recess away from the metal pad, and a top surface of the molding compound is lower than a top surface of the conductive element, and the top surface of the molding compound is away from the metal pad;
• and
• a conductive connector bonded to the conductive element, wherein a melting point of the conductive element is higher than a melting point of the conductive connector, and the conductive connector is filled into the recess of the conductive element.

A semiconductor device package, comprising:

• a first substrate;
• a conductive element formed on the first substrate, wherein the conductive element has two recesses away from the first substrate;
• and
• a conductive connector bonded to the conductive element, wherein a melting point of the conductive element is higher than a melting point of the conductive connector, and the conductive connector is filled into the recess of the conductive element.