Method and device for controlling operation using temperature deviation in multi-chip package

A memory system comprising:

• a memory controller configured to output a reference temperature of n bits;
• and
• a memory package comprising:
• a first die configured to receive the reference temperature and to output a first temperature deviation information of m bits by comparing the reference temperature with a first temperature information which is generated by a temperature sensor disposed in the first die;
• and
• a second die packaged with the first die within the memory package, the second die being operatively connected to the first die to receive the first temperature deviation information from the first die, and being configured to perform an internal operation based on the first temperature deviation information,
• wherein m is less than n, n is a natural number equal to or greater than two, and
• wherein the first die and the second die exchange signals via through silicon vias (TSVs).

A memory system comprising:

• a memory controller configured to output commands, addresses, clock signals, and data;
• and
• a memory package comprising:
• a first die including a substrate, first temperature sensors arrayed across the substrate which sense temperatures at areas of the substrate at which they are located and output information of the sensed temperatures, respectively, and a calculator operatively connected to the temperature sensors to receive the information output by the temperature sensors and configured to produce first temperature information based on the information output by the temperature sensors, and the first die is configured to receive commands, addresses, clock signals, and data from the memory controller, the first die further configured to receive the commands, the addresses, the clocks, and the data from the memory controller and to provide a signal distribution function of providing to the memory dies;
• and
• a second die packaged with the first die which is vertically stacked over the first die and exchange signals with the first die via through silicon vias (TSVs), the second die including an operation controller operatively connected to the calculator of the first die, and circuitry that performs an internal operation that is temperature dependent, the circuitry being operatively connected to the operation controller,
• wherein the operation controller is configured to control at least one parameter of the internal operation of the second die on the basis of the first temperature information produced by the first die.