Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising the steps of:

• (a) mounting a semiconductor chip having a pad and a wiring over a base material;
• and
• (b) after the step (a), electrically connecting the pad of the semiconductor chip with a terminal of the base material via a wire comprised of copper,
• wherein the semiconductor chip has:
• an insulating layer,
• the pad formed over a surface of the insulating layer,
• the wiring formed over the surface of the insulating layer, and
• an insulating film formed over the surface of the insulating layer such that the insulating film exposes a part of the pad, and such that the insulating film covers the wiring,
• wherein the pad of the semiconductor chip is manufactured by the following steps (a-1) to (a-5) of:
• (a-1) forming a laminated film over the surface of the insulating layer, the laminated film having a first conductive layer comprised of aluminum, a second conductive layer comprised of a material different from the first conductive layer and stacked over the first conductive layer, and a third conductive layer comprised of the same material as the first conductive layer and stacked over the second conductive layer,
• (a-2) after the step (a-1), forming the pad having the first to the third conductive layers and the wiring having the first to the third conductive layers by patterning the laminated film,
• (a-3) after the step (a-2), forming the insulating film over the surface of the insulating layer such that the insulating film covers the pad and the wiring,
• (a-4) after the step (a-3), exposing the part of the pad from the insulating film by patterning the insulating film, and
• (a-5) after the step (a-4), exposing the first conductive layer of the pad by etching the part of the pad exposed from the insulating film, and
• wherein, in the step (b), a first portion of the wire is connected to a surface of the first conductive layer of the pad exposed from the insulating film.