Bond pad with micro-protrusions for direct metallic bonding

A semiconductor device, comprising:

• a first semiconductor substrate having a first through-silicon via (TSV), a first pad electrically coupled to the first TSV, and a first bonding feature projecting away from the first pad, wherein the first bonding feature covers only a portion of the first pad;
• and
• a second semiconductor substrate having a second TSV, a second pad electrically coupled to the second TSV, and a second bonding feature projecting away from the second pad, wherein the second bonding feature covers only a portion of the second pad;
• wherein the first bonding feature is directly connected to the second bonding feature by a metal-to-metal bond.

A semiconductor device, comprising:

• a first semiconductor substrate having a first through-silicon via (TSV), a first pad electrically coupled to the first TSV, and a first bonding feature projecting away from the first pad, wherein the first bonding feature covers only a portion of the first pad;
• and
• a second semiconductor substrate having a second TSV and a second pad electrically coupled to the second TSV;
• wherein the first bonding feature is directly connected to the second pad by a metal-to-metal bond.

A method of manufacturing a semiconductor device, the method comprising:

• providing a first semiconductor substrate having a first through-silicon via (TSV), a first pad electrically coupled to the first TSV, and a first bonding feature projecting away from the first pad;
• disposing a second semiconductor substrate, having a second TSV and a second pad electrically coupled to the second TSV, over the first semiconductor substrate such that the first pad faces the second pad;
• and
• bonding the first semiconductor substrate to the second semiconductor substrate such that the first bonding feature is electrically coupled to the second pad.