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US 2017/0287858 A1Published application
Semiconductor device with modified pad spacing structure
AssigneeUnited Microelectronics Corp.
InventorPo-Chen Kuo
Life of this patent
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Abstract
A semiconductor device is provided, including a substrate, an interconnection structure formed on the substrate, a first top conductive layer formed on the interconnection structure, bars formed on the interconnection structure, and a second top conductive layer formed above the first top conductive layer. The first top conductive layer includes several first conducting portions spaced apart from each other, and at least one of the bars is positioned between adjacent two of the first conducting portions.
Claims27
A semiconductor device, comprising:
- a substrate;
- an interconnection structure formed on the substrate;
- a first top conductive layer formed on the interconnection structure, and the first top conductive layer comprising a plurality of first conducting portions spaced apart from each other;
- bars disposed in an insulating layer and formed on the interconnection structure, and at least one of the bars positioned between adjacent two of the plurality of first conducting portions and spaced apart from said adjacent two of the plurality of first conducting portions;
- and
- a second top conductive layer formed above the first top conductive layer.
3 more elements
A semiconductor device, comprising:
- a substrate;
- an interconnection structure formed on the substrate;
- a first top conductive layer formed on the interconnection structure, and the first top conductive layer comprising a plurality of first conducting portions spaced apart from each other, wherein spaces between the plurality of first conducting portions are filled with an insulating layer;
- bars disposed in the insulating layer and formed on the interconnection structure, and at least one of the bars positioned between adjacent two of the plurality of first conducting portions, wherein the bars and the insulating layer are made of different material;
- a second top conductive layer formed above the first top conductive layer, and the second top conductive layer comprising a plurality of second conducting portions spaced apart from each other, wherein a space between adjacent two of the plurality of the second conducting portions is defined as a pad spacing;
- and
- a passivation layer formed in the pad spacing and comprising at least a trench to segregate the passivation layer.
4 more elements
(canceled)
Dependencies are inferred from the claim text.