Variable handle wafer resistivity for silicon-on-insulator devices
OwnerJerod F. MASON, David Scott WHITEFIELD +2inventors
InventorsJerod F. MASON, David Scott WHITEFIELD, Hailing WANG, Hanching FUH
Life of this patent
Estimating the term…
Abstract
Variable handle wafer resistivity for silicon-on-insulator devices. In some embodiments, a radio-frequency device can include a silicon-on-insulator substrate having an insulator layer and a handle wafer. The radio-frequency device can further include a plurality of field-effect transistors implemented over the insulator layer to cover a corresponding portion of the handle wafer having a non-uniform distribution of resistivity values.
Claims27
A radio-frequency device comprising:
- a silicon-on-insulator substrate including an insulator layer and a handle wafer;
- and
- a plurality of field-effect transistors implemented over the insulator layer to cover a corresponding portion of the handle wafer having a non-uniform distribution of resistivity values.
A method for fabricating a radio-frequency device, the method comprising:
- providing or forming a silicon-on-insulator substrate that includes an insulator layer and a handle wafer;
- and
- forming a plurality of field-effect transistors over the insulator layer, such that the transistors cover a corresponding portion of the handle wafer having a non-uniform distribution of resistivity values.
(canceled)
(canceled)
A radio-frequency module comprising:
- a packaging substrate configured to receive a plurality of devices;
- and
- a switching device mounted on the packaging substrate, the switching device including a silicon-on-insulator substrate having an insulator layer and a handle wafer, the switching device further including a plurality of field-effect transistors implemented over the insulator layer to cover a corresponding portion of the handle wafer having a non-uniform distribution of resistivity values.
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
Dependencies are inferred from the claim text.